NAND-type semiconductor storage device and method for manufacturing same

ABSTRACT

According to this invention, there is provided a NAND-type semiconductor storage device including a semiconductor substrate, a semiconductor layer formed on the semiconductor substrate, a buried insulating film selectively formed between the semiconductor substrate and the semiconductor layer in a memory transistor formation region, diffusion layers formed on the semiconductor layer in the memory transistor formation region, floating body regions between the diffusion layers, a first insulating film formed on each of the floating body regions, a floating gate electrode formed on the first insulating film, a control electrode on a second insulating film formed on the floating gate electrode, and contact plugs connected to ones of the pairs of diffusion layers which are respectively located at ends of the memory transistor formation region, wherein the ones of the pairs of diffusion layers, which are located at the ends of the memory transistor formation region, are connected to the semiconductor substrate below the contact plugs.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims benefit of priority under 35USC 119 from the Japanese Patent Applications No. 2006-11332, filed onJan. 19, 2006 and No. 2007-5807, filed on Jan. 15, 2007, the entirecontents of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

The present invention relates to a NAND-type semiconductor storagedevice and a method for manufacturing the same.

There have conventionally been developed NAND-type flash memories asnonvolatile semiconductor memories. A memory cell transistor of aNAND-type flash memory has a structure in which a floating gateelectrode formed above a semiconductor substrate via a tunnel insulatingfilm and a control gate electrode formed above the floating gateelectrode via an interelectrode insulating film are stacked.

A NAND-type flash memory is formed by series-connecting pairs of sourceand drain regions of a plurality of memory cell transistors between twoselection transistors and connecting one of the selection transistors toa bit line and the other to a source line. A control gate electrode ofeach memory cell transistor serves as a part of a word line.

An element isolation insulating film (i.e., an element isolation region)is formed between memory cell transistors which are adjacent to eachother in the direction of a corresponding word line, and the memory celltransistors adjacent in the direction of the word line are isolated fromeach other by the element isolation insulating film. An interlayerinsulating film is formed between a piece of wiring such as the bit lineand the semiconductor substrate.

In this case, the NAND-type flash memory has various problems such asvariations in gate threshold voltage caused by a parasitic capacitancewhich occurs between the piece of wiring and the semiconductor substrateand a parasitic capacitance which occurs between the memory celltransistors adjacent in the direction of the word line.

To prevent such problems, there is proposed formation of a NAND-typeflash memory on an SOI substrate (see, e.g., Japanese Patent Laid-OpenNo. 2000-174241 and Japanese Patent Laid-Open No. 11-163303).

However, since this method uses an SOI substrate as a substrate, it ishigher in substrate cost than a case where an ordinary silicon substrateis used.

The following are the names of documents pertaining to a NAND-type flashmemory formed on an SOI:

Japanese Patent Laid-Open No. 2000-174241 and

Japanese Patent Laid-Open No. 11-163303.

SUMMARY OF THE INVENTION

According to an aspect of the present invention, there is provided aNAND-type semiconductor storage device including

a semiconductor substrate;

a semiconductor layer formed on the semiconductor substrate;

a buried insulating film selectively formed between the semiconductorsubstrate and the semiconductor layer in a memory transistor formationregion;

diffusion layers formed on the semiconductor layer in the memorytransistor formation region;

floating body regions between the diffusion layers;

a first insulating film formed on each of the floating body regions;

a floating gate electrode formed on the first insulating film;

a control electrode on a second insulating film formed on the floatinggate electrode; and

contact plugs connected to ones of the pairs of diffusion layers whichare respectively located at ends of the memory transistor formationregion,

wherein the ones of the pairs of diffusion layers, which are located atthe ends of the memory transistor formation region, are connected to thesemiconductor substrate below the contact plugs.

According to an aspect of the present invention, there is provided aNAND-type semiconductor storage device manufacturing method, including

forming a layer to be removed on a substrate,

removing a part of the layer to be removed,

forming a semiconductor layer on the layer to be removed, after the partof the layer to be removed is removed,

forming a trench which extends through the semiconductor layer andreaches the layer to be removed,

removing the layer to be removed using the trench,

forming a buried insulating film in a cavity formed after the layer tobe removed is removed,

forming a first insulating film above a region where the buriedinsulating film is formed,

forming a floating gate electrode on the first insulating film,

forming a second insulating film on the floating gate electrode,

forming a control electrode on the second insulating film, and

forming a pair of diffusion layers in the semiconductor layer to havethe floating gate electrode between the pair of diffusion layers.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1(A) and 1(B) are a plan view and a sectional view, respectively,showing the configuration of a memory cell region of a NAND-type flashmemory according to a first embodiment of the present invention;

FIGS. 2(A) and 2(B) are a plan view and a sectional view, respectively,showing the configuration of a peripheral circuit region of theNAND-type flash memory according to the first embodiment of the presentinvention;

FIGS. 3(A) and 3(B) are a plan view and a longitudinal sectional view,respectively, of an element specific to a step of a manufacturing methodfor the NAND-type flash memory according to the first embodiment of thepresent invention;

FIGS. 4(A) and 4(B) are a plan view and a longitudinal sectional view,respectively, of the element specific to another step of themanufacturing method for the NAND-type flash memory according to thefirst embodiment of the present invention;

FIGS. 5(A) and 5(B) are a plan view and a longitudinal sectional view,respectively, of the element specific to still another step of themanufacturing method for the NAND-type flash memory according to thefirst embodiment of the present invention;

FIGS. 6(A) and 6(B) are a plan view and a longitudinal sectional view,respectively, of the element specific to still another step of themanufacturing method for the NAND-type flash memory according to thefirst embodiment of the present invention;

FIGS. 7(A) to 7(D) are a plan view and a longitudinal sectional view,respectively, of the element specific to still another step of themanufacturing method for the NAND-type flash memory according to thefirst embodiment of the present invention;

FIGS. 8(A) and 8(B) are a plan view and a longitudinal sectional view,respectively, of the element specific to still another step of themanufacturing method for the NAND-type flash memory according to thefirst embodiment of the present invention;

FIGS. 9(A) to 9(D) are a plan view and a longitudinal sectional view,respectively, of the element specific to still another step of themanufacturing method for the NAND-type flash memory according to thefirst embodiment of the present invention;

FIGS. 10(A) and 10(B) are a plan view and a longitudinal sectional view,respectively, of the element specific to still another step of themanufacturing method for the NAND-type flash memory according to thefirst embodiment of the present invention;

FIGS. 11(A) and 11(B) are a plan view and a longitudinal sectional view,respectively, of the element specific to still another step of themanufacturing method for the NAND-type flash memory according to thefirst embodiment of the present invention;

FIGS. 12(A) and 12(B) are a plan view and a longitudinal sectional view,respectively, of the element specific to still another step of themanufacturing method for the NAND-type flash memory according to thefirst embodiment of the present invention;

FIG. 13 is a sectional view showing the configuration of a memory cellregion of a NAND-type flash memory according to a second embodiment ofthe present invention;

FIG. 14 is a sectional view showing the configuration of a memory cellregion of a NAND-type flash memory according to a third embodiment ofthe present invention;

FIG. 15 is a sectional view showing the configuration of a memory cellregion of a NAND-type flash memory according to a fourth embodiment ofthe present invention;

FIG. 16 is a sectional view showing the configuration of a memory cellregion of a NAND-type flash memory according to a fifth embodiment ofthe present invention;

FIGS. 17(A) and 17(B) are a plan view and a longitudinal sectional view,respectively, of an element specific to a step of a manufacturing methodfor a NAND-type flash memory according to another embodiment of thepresent invention;

FIGS. 18(A) and 18(B) are a plan view and a longitudinal sectional view,respectively, of the element specific to the step of the manufacturingmethod for the NAND-type flash memory according to the embodiment of thepresent invention;

FIGS. 19(A) and 19(B) are a plan view and a longitudinal sectional view,respectively, of the element specific to another step of themanufacturing method for the NAND-type flash memory according to theembodiment of the present invention;

FIGS. 20(A) and 20(B) are a plan view and a longitudinal sectional view,respectively, of the element specific to the step of the manufacturingmethod for the NAND-type flash memory according to the embodiment of thepresent invention;

FIGS. 21(A) to 21(D) are a plan view, a longitudinal sectional view, andtransverse sectional views, respectively, of the element specific tostill another step of the manufacturing method for the NAND-type flashmemory according to the embodiment of the present invention;

FIGS. 22(A) and 22(B) are a plan view and a longitudinal sectional view,respectively, of the element specific to the step of the manufacturingmethod for the NAND-type flash memory according to the embodiment of thepresent invention;

FIGS. 23(A) to 23(D) are a plan view, a longitudinal sectional view, andtransverse sectional views, respectively, of the element specific tostill another step of the manufacturing method for the NAND-type flashmemory according to the embodiment of the present invention;

FIGS. 24(A) and 24(B) are a plan view and a longitudinal sectional view,respectively, of the element specific to the step of the manufacturingmethod for the NAND-type flash memory according to the embodiment of thepresent invention;

FIGS. 25(A) to 25(D) are a plan view, a longitudinal sectional view, andtransverse sectional views, respectively, of the element specific tostill another step of the manufacturing method for the NAND-type flashmemory according to the embodiment of the present invention;

FIGS. 26(A) and 26(B) are a plan view and a longitudinal sectional view,respectively, of the element specific to the step of the manufacturingmethod for the NAND-type flash memory according to the embodiment of thepresent invention;

FIGS. 27(A) to 27(D) are a plan view, a longitudinal sectional view, andtransverse sectional views, respectively, of the element specific tostill another step of the manufacturing method for the NAND-type flashmemory according to the embodiment of the present invention;

FIGS. 28(A) and 28(B) are a plan view and a longitudinal sectional view,respectively, of the element specific to the step of the manufacturingmethod for the NAND-type flash memory according to the embodiment of thepresent invention;

FIGS. 29(A) to 29(D) are a plan view, a longitudinal sectional view, andtransverse sectional views, respectively, of the element specific tostill another step of the manufacturing method for the NAND-type flashmemory according to the embodiment of the present invention;

FIGS. 30(A) and 30(B) are a plan view and a longitudinal sectional view,respectively, of the element specific to the step of the manufacturingmethod for the NAND-type flash memory according to the embodiment of thepresent invention;

FIGS. 31(A) and 31(B) are a plan view and a longitudinal sectional view,respectively, of the element specific to still another step of themanufacturing method for the NAND-type flash memory according to theembodiment of the present invention; and

FIGS. 32(A) and 32(B) are a plan view and a longitudinal sectional view,respectively, of the element specific to the step of the manufacturingmethod for the NAND-type flash memory according to the embodiment of thepresent invention.

DETAILED DESCRIPTION OF THE INVENTION

Embodiments of the present invention will be explained below withreference to the drawings.

(1) First Embodiment

FIGS. 1(A) and 1(B) show the configuration of a part of a memory cellregion 10 of a NAND-type flash memory according to a first embodiment ofthe present invention. FIGS. 2(A) and 2(B) show the configuration of apart of a peripheral circuit region 20 of the NAND-type flash memory.

FIG. 1(A) shows a plan view of the memory cell region 10 of theNAND-type flash memory as seen from above; and FIG. 1(B), a longitudinalsectional view of the memory cell region 10 taken along a line A-A. FIG.2(A) shows a plan view of the peripheral circuit region 20 of theNAND-type flash memory as seen from above; and FIG. 2(B), a longitudinalsectional view of the peripheral circuit region 20 taken along a lineA-A.

As shown in FIGS. 1(A) and 1(B), in the memory cell region 10 of theNAND-type flash memory, a buried insulating film 40 is selectivelyformed in a memory transistor formation region 10A where memory celltransistors MC and selection transistors STD and STS are formed, on aP-type semiconductor substrate 30.

A P-type semiconductor layer 50 is formed to be arranged above thesemiconductor substrate 30 via the buried insulating film 40 in thememory transistor formation region 10A and be arranged on thesemiconductor substrate 30 in contact plug formation regions 10B where abit line contact plug 70 and a source line contact plug 80 are formed.

In each memory cell transistor MC, a P-type floating body 60 which iselectrically floating is formed in the semiconductor layer 50 formedabove the semiconductor substrate 30 via the buried insulating film 40.

The memory cell transistor MC has a structure in which a floating gateelectrode 100 formed above the floating body 60 via a tunnel insulatingfilm 90 and a control gate electrode (control electrode) 120 formedabove the floating gate electrode 100 via an interelectrode insulatingfilm 110 are stacked. Note that a silicide 130 is formed on the controlgate electrode 120.

In the memory cell transistor MC, a channel region 140 is formed on asurface portion of the floating body 60, and a pair 150 of N-type sourceand drain regions (diffusion layer) is formed on two sides of thefloating body 60.

Note that in each of the selection transistors STD and STS, a gateelectrode 170 is formed above the floating body 60 via a gate insulatingfilm 160. The gate electrode 170 is formed by short-circuiting thefloating gate electrode 100 and control gate electrode 120.

In each contact plug formation region 10B of the semiconductor layer 50,the pair 150 of N-type source and drain regions is formed to beconnected to the semiconductor substrate 30. The pair 150 of N-typesource and drain regions formed in the contact plug formation region 10Band the P-type semiconductor substrate 30 are isolated from each otherby a PN junction.

The memory cell region 10 of the NAND-type flash memory is formed byseries-connecting the pairs 150 of source and drain regions of theplurality of memory cell transistors MC between the two selectiontransistors STD and STS and connecting one of the selection transistors,the selection transistor STD to a bit line BL via the bit line contactplug 70 and the other, the selection transistor STS to a source line SLvia the source line contact plug 80. The control gate electrode 120 ofeach memory cell transistor MC serves as a part of a word line WL.

An element isolation insulating film (element isolation region) 180 isformed between ones of the memory cell transistors MC which are adjacentto each other in the direction of the corresponding word line WL. Thememory cell transistors MC adjacent to each other in the direction ofthe word line WL are isolated from each other by the element isolationinsulating film 180. An interlayer insulating film 190 is formed betweenthe bit line BL and the semiconductor layer 50.

As shown in FIGS. 2(A) and 2(B), for example, a transfer transistor FTconnected to the word line WL to supply a predetermined potential to thecontrol gate electrode 120 of the memory cell transistor MC is formed inthe peripheral circuit region 20 of the NAND-type flash memory.

In the transfer transistor FT, an element isolation insulating film 200is formed on each of surface portions of the semiconductor substrate 30,and a gate electrode 220 is formed near the center of an element regionof the semiconductor substrate 30 which is isolated by the elementisolation insulating films 200 via a gate insulating film 210.

A silicide 230 is formed on a surface of the gate electrode 220, andgate electrode sidewalls 240 are formed on side surfaces of the gateelectrode 220. A channel region 250 is formed below the gate electrode220 and near a surface of the semiconductor substrate 30. A pair 260 ofsource and drain regions is formed on two sides of the channel region250.

A contact plug 270 is formed on each of upper surfaces of the pair 260of source and drain regions, and a piece 280 of wiring is connected toeach contact plug 270. An interlayer insulating film 290 is formedbetween the pieces 280 of wiring and the semiconductor substrate 30.

A manufacturing method for a NAND-type flash memory according to thisembodiment will be explained with reference to FIGS. 3(A) to 12(B).

Note that FIGS. 3(A), 5(A), 7(A), 9(A), and 11(A) show plan views of amemory cell region 300 in an element as seen from above, specific torespective steps of the manufacturing method and that FIGS. 3(B), 5(B),7(B), 9(B), and 11(B) show longitudinal sectional views of the memorycell region 300 in the element taken along lines A-A, specific to therespective steps.

FIGS. 4(A), 6(A), 8(A), 10(A), and 12(A) show plan views of a peripheralcircuit region 310 in the element as seen from above, specific to therespective steps, and FIGS. 4(B), 6(B), 8(B), 10(B), and 12(B) showlongitudinal sectional views of the peripheral circuit region 310 takenalong lines A-A.

As shown in FIGS. 3(A) and 3(B) and FIGS. 4(A) and 4(B), a silicongermanium (SiGe) layer 330 with a germanium (Ge) concentration of, e.g.,30% is formed as a layer to be removed all over a semiconductorsubstrate 320 to a thickness of, e.g., about 25 nm by epitaxial growthtechnique.

A silicon (Si) layer 340 is formed all over the silicon germanium layer330 to a thickness of about 20 nm by epitaxial growth technique, andthen, a silicon nitride (SiN) film 350 is formed all over the siliconlayer 340.

The silicon nitride film 350 is patterned by lithography and RIE. Withthis operation, in the memory cell region 300, a part of the siliconnitride film 350 which is formed in a contact plug formation region 300Bis removed, and in the peripheral circuit region 310, a part of thesilicon nitride film 350 which is formed therein is removed. The siliconlayer 340 and silicon germanium layer 330 are sequentially etched usingthe silicon nitride film 350 as a mask, thereby exposing a surface ofthe semiconductor substrate 320.

As shown in FIGS. 5(A) and 5(B) and FIGS. 6(A) and 6(B), after thesilicon nitride film 350 is removed, a silicon layer 360 is formed allover the semiconductor substrate 320 and silicon germanium layer 330 to,e.g., a thickness of 30 nm by epitaxial growth technique. Note that atthis time, the silicon germanium layer 330 is used as a seed in a memorytransistor formation region 300A of the memory cell region 300 and thatthe semiconductor substrate 320 is used as a seed in each of the contactplug formation region 300B and peripheral circuit region 310 of thememory cell region 300.

As shown in FIGS. 7(A) to 7(D) and FIGS. 8(A) and 8(B), a mask material370 composed of, e.g., a silicon nitride film is deposited all over thesilicon layer 360 and then patterned by lithography and RIE. Note thatFIG. 7(C) shows a longitudinal sectional view of the memory cell region300 taken along a line B-B and that FIG. 7(D) shows a longitudinalsectional view of the memory cell region 300 taken along a line C-C.

The silicon layer 360, silicon germanium layer 330, and semiconductorsubstrate 320 are sequentially etched using the mask material 370 as amask, thereby forming element isolation trenches 380. At this time, inthe memory transistor formation region 300A of the memory cell region300, side surfaces of the silicon germanium layer 330 are exposed at aninner surface of each element isolation trench 380 (FIG. 7(D)).

As shown in FIGS. 9(A) to 9(D) and FIGS. 10(A) and 10(B), thesemiconductor substrate 30 is immersed in a predetermined etchingsolution. The silicon germanium layer 330 exposed at the inner surfacesof the element isolation trenches 380 is etched by wet etching andremoved. Note that the etching solution to be used here is a mixedsolution obtained by mixing an aqueous nitric acid solution of 70%, anaqueous hydrofluoric acid solution of 49%, an aqueous acetic acidsolution of 99.9%, and water at a volume ratio of 40:1:257.

With this operation, cavities (not shown) are formed in regions fromwhich the formed silicon germanium layer 330 has been removed. In thiscase, a part of the silicon layer 360 which is formed in each contactplug formation region 300B serves as a support unit which supports apart of the silicon layer 360 which is formed in the memory transistorformation region 300A.

The entire surface of the semiconductor substrate 320 is oxidized. Withthis operation, the cavities (not shown) are filled with buriedinsulating films 390, each composed of, e.g., a silicon oxide (SiO₂)film, and a silicon oxide film (not shown) is formed on the innersurface of each element isolation trench 380 to a thickness of about 13nm. As described above, an SOI structure is selectively formed in thememory transistor formation region 300A of the memory cell region 300.

Each element isolation trench 380 is filled with, e.g., a silicon oxidefilm by CVD, and the silicon oxide film is planarized, thereby formingan element isolation insulating film 400. Note that if the elementisolation insulating films 400 are formed by filling the elementisolation trenches 380 with silicon oxide films by CVD withoutoxidation, the buried insulating films 390 may be formed by filling thecavities (not shown) with the silicon oxide films.

As shown in FIGS. 11(A) and 11(B) and FIGS. 12(A) and 12(B), the maskmaterial 370 is removed. In the memory cell region 300, a floating gateelectrode 420 is formed above the silicon layer 360 via a tunnelinsulating film 410, and a control gate electrode 440 is formed abovethe floating gate electrode 420 via an interelectrode insulating film430. After that, a suicide 450 is formed on the control gate electrode440. In the peripheral circuit region 310, after a gate electrode 470 isformed above the silicon layer 360 via a gate insulating film 460, asilicide 480 is formed on the gate electrode 470.

After that, although not shown, pairs of source and drain regions areformed by ion implantation, and an interlayer insulating film is formedall over the silicon layer 360 by CVD. A source line contact plug and asource line are formed, and a bit line contact plug and a bit line areformed in sequence. In this manner, the NAND-type flash memory shown inFIGS. 1(A), 1(B), 2(A), and 2(B) is manufactured.

As described above, according to this embodiment, an SOI structure canbe selectively formed in the memory cell region 10 of the ordinarysemiconductor substrate 30 without using an SOI substrate. This makes itpossible to improve memory cell characteristics while keeping productioncosts low.

More specifically, isolation of a piece of wiring such as the bit lineBL and the semiconductor substrate 30 from each other by the buriedinsulating film 40 makes it possible to make a parasitic resistancegenerated between the piece of wiring and the semiconductor substrate 30lower than a case where a NAND-type flash memory is formed on anordinary semiconductor substrate without forming an SOI structure.Accordingly, variations in gate threshold voltage can be reduced.

Complete isolation of ones of the memory cell transistors MC which areadjacent to each other in the direction of the corresponding word linefrom each other by the buried insulating film 40 makes it possible tomake a parasitic capacitance which occurs between the memory celltransistors MC adjacent in the direction of the word line smaller than acase where a NAND-type flash memory is formed on an ordinarysemiconductor substrate without forming an SOI structure. Accordingly,variations in gate threshold voltage can be reduced. In this case,occurrence of punch-through between the memory cell transistors MCadjacent in the direction of the word line can be inhibited. It isfurther possible to inhibit a parasitic MOS transistor using the elementisolation insulating film 180 as a gate insulating film from beingformed in a region where each control gate electrode 120 as a part ofthe word line WL and the element isolation insulating film 180 meet andincrease a field inversion voltage.

Selective formation of an SOI structure in the memory cell region 10 ofthe ordinary semiconductor substrate 30 eliminates the need tosignificantly change a design environment, unlike a case where aNAND-type flash memory is formed on an SOI substrate. Accordingly,development efficiency can be improved correspondingly. In this case, itis possible to ensure continuity with the specification of aconventional NAND-type flash memory formed on the semiconductorsubstrate.

Since the transfer transistor FT formed in the peripheral circuit region20 performs data erase and write operations for the memory celltransistor MC, a high voltage is applied to the transfer transistor FT.Accordingly, if an SOI structure is formed in the peripheral circuitregion 20, so-called floating body effects occur due to an applied highvoltage, and punch-through becomes more likely to occur.

If no SOI structure is formed in the peripheral circuit region 20 likethis embodiment, punch-through can be suppressed, and the transistorcharacteristics of the transfer transistor FT formed in the peripheralcircuit region 20 can be improved. In this case, even if a highelectrostatic voltage is applied to the transfer transistor FT, no holesare accumulated in each floating body, like a case where an SOIstructure is formed. Accordingly, occurrence of electrostatic discharge(ESD) can be inhibited correspondingly.

(2) Second Embodiment

FIG. 13 shows the configuration of a part of a memory cell region 500 ofa NAND-type flash memory according to a second embodiment of the presentinvention. Note that the same reference numerals denote the samecomponents as those shown in FIGS. 1(A) and 1(B) and that an explanationthereof will be omitted.

In this embodiment, a buried insulating film 510 is selectively formedin a memory transistor formation region 10A except a part of a regionwhere a floating body 60 of a selection transistor STD is formed and apart of a region where the floating body 60 of a selection transistorSTS is formed.

With this configuration, not only a pair 150 of source and drain regionsformed in each of contact plug formation regions 10B of a semiconductorlayer 50 but also a part of the floating body 60 of the selectiontransistor STD and a part of that of the selection transistor STS areformed to be connected to a semiconductor substrate 30.

As described above, according to this embodiment, a backgate bias can beapplied to each of the selection transistors STD and STS by applying apredetermined voltage to the semiconductor substrate 30. This makes itpossible to improve the cutoff characteristics of the selectiontransistors STD and STS.

Since the area of a part of a bottom surface of the semiconductor layer50 which is in contact with the semiconductor substrate 30 increases,the mechanical strength of the semiconductor layer 50 when removing asilicon germanium layer by wet etching (FIGS. 9(A) to 9(D)) can beincreased. This makes it possible to inhibit collapse of thesemiconductor layer 50 arranged above cavities formed by removing thesilicon germanium layer and generation of dust. Accordingly, yields canbe increased.

According to this embodiment, the same effects as those of the firstembodiment can be obtained. More specifically, an SOI structure can beselectively formed in the memory cell region 500 of the ordinarysemiconductor substrate 30 without using an SOI substrate. This makes itpossible to improve memory cell characteristics while keeping productioncosts low.

(3) Third Embodiment

FIG. 14 shows the configuration of a part of a memory cell region 520 ofa NAND-type flash memory according to a third embodiment of the presentinvention. Note that the same reference numerals denote the samecomponents as those shown in FIGS. 1(A) and 1(B) and that an explanationthereof will be omitted.

In this embodiment, a buried insulating film 530 is selectively formedin a region of a memory transistor formation region 10A where a floatingbody 60 is formed such that the buried insulating film 530 correspondsto the floating body 60. With this configuration, pairs 150 of sourceand drain regions formed in a semiconductor layer 50 are all formed tobe connected to a semiconductor substrate 30.

As described above, according to this embodiment, the area of a part ofa bottom surface of the semiconductor layer 50 which is in contact withthe semiconductor substrate 30 becomes larger than that in the secondembodiment. Thus, the mechanical strength of the semiconductor layer 50when removing a silicon germanium layer by wet etching (FIGS. 9(A) to9(D)) can be further increased. This makes it possible to inhibitcollapse of the semiconductor layer 50 arranged above cavities formed byremoving the silicon germanium layer and generation of dust.Accordingly, yields can be increased.

According to this embodiment, the same effects as those of the firstembodiment can be obtained. More specifically, an SOI structure can beselectively formed in the memory cell region 520 of the ordinarysemiconductor substrate 30 without using an SOI substrate. This makes itpossible to improve memory cell characteristics while keeping productioncosts low.

(4) Fourth Embodiment

FIG. 15 shows the configuration of a part of a memory cell region 540 ofa NAND-type flash memory according to a fourth embodiment of the presentinvention. Note that the same reference numerals denote the samecomponents as those shown in FIGS. 1(A) and 1(B) and that an explanationthereof will be omitted.

In this embodiment, a pair 550 of N-type source and drain regions isselectively formed on a surface portion of a semiconductor substrate 30such that the pair 550 of N-type source and drain regions is in contactwith a pair 150 of source and drain regions formed in each of contactplug formation regions 10B of a semiconductor layer 50.

Each contact plug formation region 10B of the semiconductor layer 50 isformed by epitaxially growing the semiconductor substrate 30.Accordingly, in the contact plug formation region 10B, a latticemismatch (crystal misalignment) or crystal defect may occur at aninterface between the semiconductor layer 50 and the semiconductorsubstrate 30. If a depletion layer is formed at the interface betweenthe semiconductor layer 50 and the semiconductor substrate 30 due tooccurrence of a lattice mismatch or crystal defect, a leak currentdisadvantageously occurs between the semiconductor layer 50 and thesemiconductor substrate 30.

In contrast, according to this embodiment, each of the interfacesbetween the semiconductor layer 50 and the semiconductor substrate 30 inthe contact plug formation region 10B is covered with the pair 550 ofsource and drain regions, and thus no depletion layer is formed at theinterface. This makes it possible to inhibit occurrence of a leakcurrent between the semiconductor layer 50 and the semiconductorsubstrate 30 in each contact plug formation region 10B.

According to this embodiment, the same effects as those of the firstembodiment can be obtained. More specifically, an SOI structure can beselectively formed in the memory cell region 540 of the ordinarysemiconductor substrate 30 without using an SOI substrate. This makes itpossible to improve memory cell characteristics while keeping productioncosts low.

(5) Fifth Embodiment

FIG. 16 shows the configuration of a part of a memory cell region 560 ofa NAND-type flash memory according to a fifth embodiment of the presentinvention. Note that the same reference numerals denote the samecomponents as those shown in FIGS. 1(A) and 1(B) and that an explanationthereof will be omitted.

In this embodiment, an N-type floating body 570 is formed. Adepression-type memory cell transistor is used as a memory celltransistor MC.

This configuration reduces a gate threshold voltage. Accordingly, if avoltage applied to a control gate electrode 120 is the same, a cellcurrent increases. This makes it possible to increase noise toleranceand improve the reliability of memory cell operation.

According to this embodiment, the same effects as those of the firstembodiment can be obtained. More specifically, an SOI structure can beselectively formed in a memory cell region 560 of an ordinarysemiconductor substrate 30 without using an SOI substrate. This makes itpossible to improve memory cell characteristics while keeping productioncosts low.

Note that the above-described embodiments are merely examples and notintended to limit the present invention. More specifically, although aNAND-type flash memory is manufactured as a flash memory, any otherflash memory having a structure in which a floating gate electrode and acontrol gate electrode are stacked, such as a NOR-type or AND-type one,may be manufactured instead.

A manufacturing method for a NAND-type flash memory according to anotherembodiment will be explained with reference to FIGS. 17(A) to 32(B).

Note that FIGS. 17(A), 19(A), 21(A), 23(A), 25(A), 27(A), 29(A), and31(A) show plan views of a memory cell region 600 in an element as seenfrom above, specific to respective steps of the manufacturing method andthat FIGS. 17(B), 19(B), 21(B), 23(B), 25(B), 27(B), 29(B), and 31(B)show longitudinal sectional views of the memory cell region 600 in theelement taken along lines A-A, specific to the respective steps.

FIGS. 21(C), 23(C), 25(C), 27(C), and 29(C) show transverse sectionalviews of the memory cell region 600 taken along lines B-B, and FIGS.21(D), 23(D), 25(D), 27(D), and 29(D) show transverse sectional views ofthe memory cell region 600 taken along lines C-C.

FIGS. 18(A), 20(A), 22(A), 24(A), 26(A), 28(A), 30(A), and 32(A) showplan views of a peripheral circuit region 610 in the element as seenfrom above, specific to the respective steps, and FIGS. 18(B), 20(B),22(B), 24(B), 26(B), 28(B), 30(B), and 32(B) show longitudinal sectionalviews of the peripheral circuit region 610 taken along lines A-A.

As shown in FIGS. 17(A) and 17(B) and FIGS. 18(A) and 18(B), a silicongermanium (SiGe) layer 630 with a germanium (Ge) concentration of, e.g.,30% is formed as a layer to be removed all over a semiconductorsubstrate 620 to a thickness of, e.g., about 25 nm by epitaxial growthtechnique.

A silicon (Si) layer 640 is formed all over the silicon germanium layer630 to a thickness of about 20 nm by epitaxial growth technique, andthen, a silicon nitride (SiN) film 650 is formed all over the siliconlayer 640.

The silicon nitride film 650 is patterned by lithography and RIE. Withthis operation, in the memory cell region 600, parts of the siliconnitride film 650 which are formed in a bit line contact plug formationregion 600B and in, of element isolation insulating film formationregions, element isolation insulating film formation regions (to bereferred to as support unit formation regions hereinafter) 600C arrangedat predetermined intervals in the direction of a word line WL areremoved, and in the peripheral circuit region 610, a part of the siliconnitride film 650 which is formed therein is removed.

Note that a support unit for supporting the silicon layer to be formedon the silicon germanium layer 630 later is formed in each support unitformation region 600C, as in the bit line contact plug formation region600B. A CVD oxide film 655, for example, is then deposited all over thesilicon nitride film 650, and the CVD oxide film 655 is partiallyremoved by RIE such that parts thereof are left on sidewalls of thesilicon nitride film 650.

As shown in FIGS. 19(A) and 19(B) and FIGS. 20(A) and 20(B), the siliconlayer 640 and silicon germanium layer 630 are sequentially etched usingthe silicon nitride film 650 and CVD oxide film 655 as masks, therebyexposing a surface of the semiconductor substrate 620.

After the silicon nitride film 650 and CVD oxide film 655 are removed, asilicon layer 660 is formed all over the semiconductor substrate 620 andsilicon layer 640 to, e.g., a thickness of 30 nm by epitaxial growthtechnique.

Note that at this time, the silicon layer 640 is used as a seed in atransistor formation region 600A of the memory cell region 600 exceptthe support unit formation regions 600C and that the semiconductorsubstrate 620 is used as a seed in each of the contact plug formationregion 600B and support unit formation regions 600C of the memory cellregion 600 and the peripheral circuit region 610.

As shown in FIGS. 21(A) to 21(D) and FIGS. 22(A) and 22(B), a maskmaterial 670 composed of, e.g., a silicon nitride film is deposited allover the silicon layer 660 and then patterned by lithography and RIE.With this operation, parts of the mask material 670 are left in regionswhich are to serve as element regions later.

As shown in FIGS. 23(A) to 23(D) and FIGS. 24(A) and 24(B), a CVD-BSGfilm 672, for example, is deposited all over the surface, and theCVD-BSG film 672 is partially removed by RIE such that parts thereof areleft on sidewalls of the mask material 670. At this time, one of theparts of the CVD-BSG film 672 is also left on sidewalls of the part ofthe mask material 670 formed in the peripheral circuit region 610. Afterthat, a photoresist is applied to the parts of the mask material 670 andthose of the CVD-BSG film 672, and exposure and development areperformed. With this operation, a resist mask 674 having a patterncorresponding to the support unit formation regions 600C is formed.

As shown in FIGS. 25(A) to 25(D) and FIGS. 26(A) and 26(B), the parts ofthe CVD-BSG film 672 formed in element isolation insulating filmformation regions 600D (the element isolation insulating film formationregions except the support unit formation regions 600C) are removed by,e.g., HF (hydrofluoric acid) vapor using the resist mask 674 and theparts of the mask material 670 as masks.

The silicon layer 660 and silicon germanium layer 630 are sequentiallyetched using the resist mask 674 and the parts of the mask material 670as masks, thereby forming trenches 680. At this time, side surfaces ofthe silicon germanium layer 630 are exposed at an inner surface of eachtrench 680.

The semiconductor substrate 620 is immersed in a predetermined etchingsolution. The silicon germanium layer 630 exposed at the inner surfacesof the trenches 680 is etched by wet etching and removed. Note thatexamples of the etching solution to be used here include SH (a mixedsolution of sulfuric acid and hydrogen peroxide) and a mixed solution ofTMY and hydrogen peroxide.

With this operation, cavities 685 are formed in regions from which theformed silicon germanium layer 630 has been removed. In this case, partsof the silicon layer 660 which are formed in the bit line contact plugformation region 600B and support unit formation regions 600C serve assupport units which support a part of the silicon layer 660 which isformed in the transistor formation region 600A.

As shown in FIGS. 27(A) to 27(D) and FIGS. 28(A) and 28(B), the entiresurfaces of the semiconductor substrate 620 and silicon layer 660 areoxidized. With this operation, a silicon oxide film 682 is formed on theinner surface of each trench 680, and the cavities 685 are filled withburied insulating films 684, each composed of a silicon oxide film. Asdescribed above, an SOI structure is selectively formed in thetransistor formation region 600A of the memory cell region 600.

As shown in FIGS. 29(A) to 29(D) and FIGS. 30(A) and 30(B), the siliconlayer 660, silicon oxide films 682, and semiconductor substrate 620 aresequentially etched using the parts of the mask material 670 as a mask,thereby forming element isolation trenches 690. Note that in this case,ones of the element isolation trenches 690 which are formed in theelement isolation insulating film formation regions 600D (the elementisolation insulating film formation regions except the support unitformation regions 600C) are deeper by the depth of each trench 680 thanones which are formed in the support unit formation regions 600C. Eachelement isolation trench 690 is filled with, e.g., a silicon oxide filmby CVD, and the silicon oxide film is planarized, thereby forming anelement isolation insulating film 700. After that, the mask material 670is removed.

As shown in FIGS. 31(A) and 31(B) and FIGS. 32(A) and 32(B), in thememory cell region 600, a floating gate electrode 720 is formed abovethe silicon layer 660 via a tunnel insulating film 710, and a controlgate electrode 740 is formed above the floating gate electrode 720 viaan interelectrode insulating film 730. After that, a silicide 750 isformed on the control gate electrode 740. In the peripheral circuitregion 610, after a gate electrode 770 is formed above the silicon layer660 via a gate insulating film 760, a silicide 780 is formed on the gateelectrode 770.

After that, although not shown, pairs of source and drain regions areformed by ion implantation, and an interlayer insulating film is formedall over the silicon layer 660 by CVD. A source line contact plug and asource line are formed, and a bit line contact plug and a bit line areformed in sequence. In this manner, the NAND-type flash memory ismanufactured.

As described above, according to this embodiment, the part of thesilicon layer 660 formed in the bit line contact plug formation region600B and the parts of the silicon layer 660 formed in the support unitformation regions 600C serve as the support units, which support thepart of the silicon layer 660 formed in the transistor formation region600A.

Therefore, the mechanical strength of the silicon layer 660 whenremoving the silicon germanium layer 630 by wet etching (FIGS. 25(A) to25(D)) can be made higher than that in the first embodiment. This makesit possible to inhibit collapse of the silicon layer 660 arranged abovethe cavities 685 formed by removing the silicon germanium layer 630 andgeneration of dust. Accordingly, yields can be increased.

According to this embodiment, the same effects as those of the firstembodiment can be obtained. More specifically, an SOI structure can beselectively formed in the memory cell region 600 of the ordinarysemiconductor substrate 620 without using an SOI substrate. This makesit possible to improve memory cell characteristics while keepingproduction costs low.

1. A NAND-type semiconductor storage device comprising: a semiconductorsubstrate; a semiconductor layer formed on the semiconductor substrate;a buried insulating film selectively formed between the semiconductorsubstrate and the semiconductor layer in a memory transistor formationregion; diffusion layers formed on the semiconductor layer in the memorytransistor formation region; floating body regions between the diffusionlayers; a first insulating film formed on each of the floating bodyregions; a floating gate electrode formed on the first insulating film;a control electrode on a second insulating film formed on the floatinggate electrode; and contact plugs connected to ones of the pairs ofdiffusion layers which are respectively located at ends of the memorytransistor formation region, wherein the ones of the pairs of diffusionlayers, which are located at the ends of the memory transistor formationregion, are connected to the semiconductor substrate below the contactplugs.
 2. The NAND-type semiconductor storage device according to claim1, wherein ones of the floating gate electrodes and ones of the controlelectrodes which are located at the ends of the memory transistorformation region are respectively short-circuited.
 3. The NAND-typesemiconductor storage device according to claim 1, wherein ones of thefloating body regions which are respectively formed at the ends of thememory transistor formation region are connected to the semiconductorsubstrate.
 4. The NAND-type semiconductor storage device according toclaim 1, wherein the buried insulating film is formed below the floatingbody regions, and the pairs of diffusion layers are connected to thesemiconductor substrate.
 5. The NAND-type semiconductor storage deviceaccording to claim 1, further comprising: a second diffusion layerselectively formed on a surface of the semiconductor substrate below thecontact plugs.
 6. The NAND-type semiconductor storage device accordingto claim 1, wherein each of the floating body regions has a conductivitytype different from a conductivity type of the semiconductor substrate.7. The NAND-type semiconductor storage device according to claim 1,wherein one of the contact plugs located at the ends of the memorytransistor formation region is connected to a bit line, and the other ofthe contact plugs is connected to a source line.
 8. The NAND-typesemiconductor storage device according to claim 1, wherein each of thecontrol electrodes forms a part of a word line.
 9. The NAND-typesemiconductor storage device according to claim 1, further comprising: asilicide formed on each of the control electrodes.
 10. The NAND-typesemiconductor storage device according to claim 1, further comprising:an element isolation insulating film which is formed near a surfaceportion of the semiconductor substrate to be orthogonal to the controlelectrodes.
 11. The NAND-type semiconductor storage device according toclaim 7, further comprising: an interlayer insulating film formedbetween the bit line and the semiconductor layer.
 12. A NAND-typesemiconductor storage device manufacturing method, comprising: forming alayer to be removed on a substrate; removing a part of the layer to beremoved; forming a semiconductor layer on the substrate and layer to beremoved, after the part of the layer to be removed is removed; forming atrench which extends through the semiconductor layer and reaches thelayer to be removed; removing the layer to be removed using the trench;forming a buried insulating film in a cavity formed after the layer tobe removed is removed; forming a first insulating film above a regionwhere the buried insulating film is formed; forming a floating gateelectrode on the first insulating film; forming a second insulating filmon the floating gate electrode; forming a control electrode on thesecond insulating film; and forming a pair of diffusion layers in thesemiconductor layer to have the floating gate electrode between the pairof diffusion layers.
 13. The NAND-type semiconductor storage devicemanufacturing method according to claim 12, wherein when the layer to beremoved is formed on the substrate, the layer to be removed is formed byepitaxially growing the layer to be removed on the substrate.
 14. TheNAND-type semiconductor storage device manufacturing method according toclaim 12, wherein when the semiconductor layer is formed on thesubstrate and layer to be removed, the semiconductor layer is formed byepitaxially growing the semiconductor layer on the substrate and layerto be removed.
 15. The NAND-type semiconductor storage devicemanufacturing method according to claim 12, wherein when the trenchreaching the layer to be removed is formed, side surfaces of the layerto be removed are exposed at an inner surface of the trench bysequentially etching the semiconductor layer, layer to be removed, andsubstrate and forming the trench.
 16. The NAND-type semiconductorstorage device manufacturing method according to claim 12, wherein whenthe layer to be removed is removed, the layer to be removed is removedby etching the layer to be removed exposed at the inner surface of thetrench by wet etching.
 17. The NAND-type semiconductor storage devicemanufacturing method according to claim 12, wherein when the buriedinsulating film is formed in the cavity, the cavity is filled with theburied insulating film composed of a silicon oxide film by oxidizing anentire surface of the substrate.
 18. The NAND-type semiconductor storagedevice manufacturing method according to claim 17, further comprisingforming an element isolation insulating film in the trench after theburied insulating film is formed in the cavity.
 19. The NAND-typesemiconductor storage device manufacturing method according to claim 12,wherein when the buried insulating film is formed in the cavity, theburied insulating film is formed by filling the cavity with a siliconoxide film used to form an element isolation insulating film in thetrench.
 20. The NAND-type semiconductor storage device manufacturingmethod according to claim 12, wherein when the part of the layer to beremoved is removed, a part of the layer to be removed which is formed ina bit line contact plug formation region and parts of the layer to beremoved which are formed in, of element isolation insulating filmformation regions, ones arranged at predetermined intervals in adirection of a word line are removed.